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Equivalent circuit
C
Built-in Avalanche Diode for Surge Absorbing Darlington
2SD2141
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB Conditions VCB=330V VEB=6V IC=25mA VCE=2V, IC=3A IC=4A, IB=20mA VCE=12V, IE=-0.5A VCB=10V, f=1MHz 2SD2141 10max 20max 330 to 430 1500min 1.5max 20typ 95typ V MHz pF
13.0min
B
(1.5k)(100) E
Silicon NPN Triple Diffused Planar Transistor sAbsolute maximum ratings (Ta=25C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SD2141 38050 38050 6 6(Pulse10) 1 35(Tc=25C) 150 -55 to +150 Unit V V V A A W C C
Application : Ignitor, Driver for Solenoid and Motor, and General Purpose
(Ta=25C) Unit
External Dimensions FM20(TO220F)
4.00.2 10.10.2 4.20.2 2.8 c0.5
A
V
16.90.3 8.40.2
mA
1.350.15 1.350.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.20.2 2.40.2
2.54
3.9 BCE
0.2
0.80.2
a b
o3.30.2
Weight : Approx 2.0g a. Type No. b. Lot No.
IC - VCE Characteristics (Typical)
10
0 15 m
VCE( sat ) - I B Characteristics (Typical)
3
I C - V BE Temperature Characteristics (Typical)
10 (V C E= 4V)
120mA
A
90mA 60mA
A 20m mA 18
Collector Current I C( A)
Collector Current I C( A)
2mA
2
Collector Current I C (A)
4mA
5
p) Tem
ase
(C
1A
5C
C (C
0
0
2
4
6
0
0.2
0.5
1
5
10
50
100 200
0
0
1.0 Base-Emittor Voltage V B E( V)
-30C
25
12
(Case
as
1
eT
3A
Temp
em
5A
p)
)
IB= 1m A
IC=7A
5
2.0
2.4
Collector-Emitter Voltage V C E( V)
Base Current I B( mA)
hFE - IC Characteristics (Typical)
(VCE=2V) 10000 5000 DC Cur rent Gain h F E
h FE - I C Temperature Characteristics (Typical)
(VCE=2V) 10000 5000 DC Cur rent Gain h F E
j- a( C/W)
j-a - t Characteristics
5
Typ
12
1000 500
5
1000 500
25
C
Transient Thermal Resistance
C
1 0.5
-5
5
C
100 50
100 50
10 0.02
0.1
0.5
1
5
10
20 0.02
0.1
0.5
1.0
5
10
0.1
1
10 Time t(ms)
100
1000
Collector Current I C( A)
Collector Current I C( A)
fT - IE Characteristics (Typical)
(V C E= 12V) 40 20 10 5 Cu t-off Fre quen cy f T( M H Z) 30 Collector Curre nt I C( A)
Safe Operating Area (Single Pulse)
40
P c - T a Derating
Natural Cooling Silicone Grease Heatsink: Aluminum in mm 30
D
C
1 0.5
M aximum Po wer Dissipation P C( W)
Typ
10 0m
1ms
10 ms
s
W ith In
20
20
fin ite he at
150x150x2 10 100x100x2 50x50x2 2 0 Without Heatsink 0 25 50 75
si nk
0.1 0.05
10
Without Heatsink Natural Cooling
0 0.01
0.05
01
0.5
1
5
0.01 1
5
10
50
100
500
100
125
150
Emitter Current I E( A)
Collector-Emitter Voltage V C E( V)
Ambient Temperature Ta(C)
147

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